Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

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概要

• 論文の詳細を見る

• We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode.

• 社団法人応用物理学会の論文
• 1990-02-20

著者

• Akasaki Isamu

  School Of Engineering Nagoya University

• AMANO Hiroshi

  School of Engineering, Nagoya University

• ASAHI Tsunemori

  School of Engineering, Nagoya University

• Asahi Tsunemori

  School Of Engineering Nagoya University

• Amano Hiroshi

  School Of Engineering Nagoya University

関連論文

• Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

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