Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam Etching Using Chlorine and Argon

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概要

• 論文の詳細を見る

• Very smooth InGaAsP/InP surfaces and sidewalls were obtained by using the enhanced sputtering effect of Ar addition to Cl_2 etching gas in RIBE. The substrate temperature was raised to 180℃ in order to remove involatile chlorides and impurities. Moreover, a vertical sidewall with no lateral etching under the mask was realized at the same time. This enables submicron dry etching for heterostructure devices.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Nunoue Shin-ya

  Research And Development Center Toshiba Corporation

• Nishibe T

  Research And Development Center Toshiba Corporation

• NISHIBE Tohru

  Research and Development Center, Toshiba Corporation

関連論文

• Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam Etching Using Chlorine and Argon

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