High Mobility Poly-Si Thin Film Transistors Using Solid Phase Crystallized a-Si Films Deposited by Plasma-Enhanced Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• Thin film transistors (TFTs) have been developed on quartz substrates by using large-grain-size polycrystalline silicon (poly-Si) films. The poly-Si films were fabricated by solid phase crystallization (SPC) of amorphous silicon (a-Si) deposited by plasma-enhanced chemical vapor deposition (PECVD). We have found that the dehydrogenation process is strongly correlated with the SPC of the a-Si, especially in nucleus generation time. The n-channel TFT mobility of 158 cm^2/(V・s) is obtained by using the SPC of the PECVD a-Si.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Oka Hideaki

  Research & Development Division Seiko Epson Corporation

• Kurihara H

  Osaka City Univ. Osaka Jpn

• Kurihara Hajime

  Research & Development Division Seiko Epson Corporation

• Takenaka Satoshi

  Research & Development Division Seiko Epson Corporation

• KUNII Masafumi

  Research & Development Division, Seiko Epson corporation

• Kunii Masafumi

  Research & Development Division Seiko Epson Corporation

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• High Mobility Poly-Si Thin Film Transistors Using Solid Phase Crystallized a-Si Films Deposited by Plasma-Enhanced Chemical Vapor Deposition

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