Low-Temperature Polysilicon Thin Film Transistors by Non-Mass-Separated Ion Flux Doping Technique
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概要
- 論文の詳細を見る
A low-temperature, high-throughput self-aligned poly-Si TFT fabrication process has been developed. The process includes two key techniques. The first one is a laser-induced crystallization of a-Si occurring in the solid phase using a CW Ar^+ laser beam with high scanning speed, which was previously reported. The second is large-diameter ton flux doping without mass separation. The maximum processing temperature is 450℃, which is sufficiently low for use of inexpensive glass substrates. With this process, excellent poly-Si TFT characteristics of I_<on>/I_<off> > 10^6 and μ_<FE>=40 cm^2/(V・s) were obtained.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Iwasaki Atsushi
Research Center Asahi Glass Co. Lid.
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Nakamura Nobuhiro
Research Center Asahi Glass Co. Lid.
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MASUMO Kunio
Research Center, Asahi Glass Co., Lid.
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KUNIGITA Masaya
Research Center, Asahi Glass Co., Lid.
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TAKAFUJI Satoshi
Research Center, Asahi Glass Co., Lid.
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YUKI Masanori
Research Center, Asahi Glass Co., Lid.
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Masumo Kunio
Research Center Asahi Glass Co. Lid.
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Yuki Masanori
Research Center Asahi Glass Co. Lid.
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Kunigita Masaya
Research Center Asahi Glass Co. Lid.
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Takafuji Satoshi
Research Center Asahi Glass Co. Lid.
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- Low-Temperature Polysilicon Thin Film Transistors by Non-Mass-Separated Ion Flux Doping Technique
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