Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper we present results of two-dimensional numerical simulations of both amorphous silicon and NMOS and PMOS polycrystalline silicon thin-film transistors. Both types of devices are modeled using an effective medium approach whereby the defects and grain boundaries in the material are treated as a spatially uniform density of localized states in the band gap. The field-effect mobility is self-consistently calculated from the appropriate band mobility and using one set of parameters for each material we obtain very good agreement between simulations of both output and transfer characteristics and experimental data. The experimental activation energy of the source-drain current for the polycrystalline devices is also found to be in excellent agreement with the numerical simulations.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Hack M.

  Xerox Palo Alto Research Center

• SHAW J.

  Xerox Corp, Design Research Institute

• LECOMBER P.

  Xerox Corp, Design Research Institute

• WILLUMS M.

  University of Dundee

• Lecomber P.

  Xerox Corp Design Research Institute

• Shaw J.

  Xerox Corp Design Research Institute

関連論文

• Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors

スポンサーリンク