As^+ -Preamorphization Method for Shallow P^+ -n Junction Formation

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概要

• 論文の詳細を見る

• The effects of preamorphization by As^+ implantation for the shallow p^+ -n junction formation have been investigated in this study. The retarded diffusion effect of boron atoms due to the electric field produced by arsenic profile was observed during annealing. The shallow p^+ -n junction with low leakage was obtained by optimizing the thickness of the preamorphized layer.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Lee Jong-duk

  Infer-university Semiconductor Research Center Seoul National University

• Kim H‐j

  Korea Inst. Sci. And Technol. Seoul Kor

• KWON Sang-Jik

  Infer-University Semiconductor Research Center, Seoul National University

• KIM Hyeong-Joon

  Infer-University Semiconductor Research Center, Seoul National University

• Kwon Sang-jik

  Infer-university Semiconductor Research Center Seoul National University

関連論文

• As^+ -Preamorphization Method for Shallow P^+ -n Junction Formation

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