Sharp Boron Spikes in Silicon Grown at Reduced and Atmospheric Pressure by Fast-Gas-Switching CVD
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概要
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Boron doping spikes in Si were grown by fast-gas-switching CVD at 800 and 850℃ using Si_2H_6 and B_2H_6 in 0.03, 0.1 and 1 atm H_2 as the carrier gas. The B_2H_6 doping gas was added for 2 s by two methods, namely during growth or as a flush while the Si_2H_6 flow was interrupted. High-resolution SIMS measurements have revealed extremely sharp and highly concentrated dopant profiles. Peak B concentrations up to 5×10^<21> cm^<-3> and, at 1 atm H_2, a FWHM of 3 nm were obtained. Electrical measurements show that for B-spikes having a FWHM value of 4-5 nm, a sheet resistivity of as low as 580 Ω/□ can be obtained.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Maes Johannes
Philips Research Laboratories
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Vriezema Cornelis
Philips Research Laboratories
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VINK Adriaan
Philips Research Laboratories
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ROKSNOER Piet
Philips Research Laboratories
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IJZENDOORN Leo
Philips Research Laboratories
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ZALM Peer
Philips Research Laboratories