Low Threshold Current and High Relaxation Oscillation Frequency of Short-Cavity Integrable InP/InGaAsP BRS Laser

スポンサーリンク

概要

• 論文の詳細を見る

• We describe the fabrication and modulation characteristics of short cavity InP/InGaAsP buried ridge stripe (BRS) lasers with ion beam etched facets. A CW threshold current as low as 9 mA is achieved for 50 μm-long cavity laser. A relaxation oscillation frequency in excess of 17 GHz is observed in such laser for an output optical power of only 9 mW / facet. The small signal - 3 dB modulation frequency of such device is 11.5 GHz and is limited by the parasitic impedances of the BRS structure.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Sermage B

  France Telecom R&d Bagneux Fra

• BOUADMA Nordine

  Centre National d'Etudes des Telecommunications, Laboratoire de Bagneux

• SERMAGE Bernard

  Centre National d'Etudes des Telecommunications, Laboratoire de Bagneux

• DEVOLDERE Pascal

  Centre National d'Etudes des Telecommunications, Laboratoire de Bagneux

• Bouadma Nordine

  Centre National D'etudes Des Telecommunications Laboratoire De Bagneux

• Devoldere Pascal

  Centre National D'etudes Des Telecommunications Laboratoire De Bagneux

• SERMAGE Bernard

  Centre National d'Etudes des Telecommunications, Laboratoire de Bagneux

関連論文

• Low Threshold Current and High Relaxation Oscillation Frequency of Short-Cavity Integrable InP/InGaAsP BRS Laser

スポンサーリンク