An SCR with Simple MIS Structure

スポンサーリンク

概要

• 論文の詳細を見る

• A device to work as an SCR with a simple MIS p-n Structure is proposed and demonstrated. It employs two junction diodes, with a thin oxide layer grown prior to metallization. This device can act as a triac when a bi-directional ac voltage is applied, while acts as an SCR when a bias voltage is applied to the N-substrate.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Lee C.

  Institute Of Electronics National Chiao Tung University

• Lee C.

  Institute Of Applied Mechanics And Nems Research Center National Taiwan University

• Chang D

  Institute Of Electronics National Chiao Tung University:(present Address) Electronic Engineering Dep

• CHANG D.

  Institute of Electronics, National Chiao Tung University

• LEI T.

  Institute of Electronics, National Chiao Tung University

関連論文

• The low latitude ionospheric effects of the April 2000 magnetic storm near the longitude 120°E
• On the Hardening of Friction Stir Processed Mg-AZ31 Based Composites with 5-20% Nano-ZrO_2 and Nano-SiO_2 Particles
• Flow Images of a Low Reynolds Number Annular Swirling Jet
• High Strain Rate Superplasticity of Mg Based Composites Fabricated by Friction Stir Processing
• An SCR with Simple MIS Structure
• Experimental Study of Chemical Reaction between LiF and Polyflourene Interface During Sputtering ITO Cathode for Top Emission PLED Devices
• Experimental Study of Chemical Reaction between LiF and Polyflourene Interface during Sputtering Indium–Tin Oxide Cathode for Top Emission Polymer Light Emitting Devices

スポンサーリンク