Photostructural Change of Chalcogenide Glass Films by Irradiation of Laser Diode Emission
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概要
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An optical change of As-Se-S-Ge amorphous chalcogenide film was observed by irradiation of a focused beam of laser diode emission of 830 nm wavelength. An optical analysis shows that this change occurs through energy band-tail absorption with an absorption coefficient of less than about 10 cm^<-1> and through a pure photon process.
- 社団法人応用物理学会の論文
- 1990-12-20