Photovoltaic, I-V and C-V Characteristics of SnO_2/SiO_2/a-Si:H/mc-Si:H Structures

スポンサーリンク

概要

• 論文の詳細を見る

• Structures of the type SnO_2/SiO_2/ a-Si:H/mc-Si:H/Al and SnO_2/ SiO_2/a-Si:H/mc-Si:H/a-Si:H/mc-Si:H/ were fabricated and studied for their I-V, C-V and photovoltaic characteristics. Results indicate that the structures behave like two diodes formed in the back-to-bak geometry. Furthermore, from the I- V studies under illumination, it is observed that a sufficient drift field exists in the structure without intentional doping of Si-based layers to yield a gain in current under illumination of about 10^4.

• 社団法人応用物理学会の論文
• 1990-11-20

著者

• Agashe C

  Univ. Poona Pune Ind

• Faraji Mohammad

  School Of Energy Studies University Of Poona

• BABRAS Suvarna

  School of Energy Studies, University of Poona

• MIRZAPOUR Safar

  School of Energy Studies, University of Poona

• AGASHE Chitra

  School of Energy Studies, University of Poona

• RAJARSHI Sharadchandra

  School of Energy Studies, University of Poona

• DUSANE Rajiv

  School of Energy Studies, University of Poona

• GHAISAS Subhash

  Department of Electronic Science, University of Poona

• Ghaisas Subhash

  Department Of Electronic Science University Of Poona

• Mirzapour Safar

  School Of Energy Studies University Of Poona

• Babras Suvarna

  School Of Energy Studies University Of Poona

• Rajarshi Sharadchandra

  School Of Energy Studies University Of Poona

• Dusane Rajiv

  School Of Energy Studies University Of Poona

関連論文

• Photovoltaic, I-V and C-V Characteristics of SnO_2/SiO_2/a-Si:H/mc-Si:H Structures

スポンサーリンク