Growth of Nitrogen-Doped ZnSe and Inhibition of Hydrogen Passivation of Nitrogen Acceptor by Photoassisted Metal-Organic Chemical Vapor Deposition

概要

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Growth of nitrogen doped ZnSe was carried out at the growth temperature of 330 to 390℃ by photoassisted metal-organic chemical vapor deposition (MOCVD). Nitrogen concentration of more than 10^<18> cm^<-3> was obtained at growth temperatures lower than 350℃ using ammonia and t-butylamine as nitrogen dopant sources. Furthermore, hydrogen passivation of nitrogen, which is regarded as a possible cause of acceptor compensation in the layer doped using ammonia, was drastically decreased and p-type layer with hole concentration of 8.3×10^<17> cm^<-3> was obtained using t-butylamine.
社団法人応用物理学会の論文
1995-08-15