Reconstruction Dependent Indium Segregation

概要

論文の詳細を見る
Fully strained In_<0.5>Ga_<0.5>As layers are grown on InAs substrates in order to measure the degree of In segregation, and its dependence on surface reconstruction and substrate temperature by reflection high energy electron diffraction. We find that segregation is reduced for an As-covered 2×4 reconstructed surface as compared to a group III stabilized surface. Results show that the segregation process occurs primarily between the surface and the first subsurface layer. We present evidence showing that the effect a 1 Ml In_<0.5>Ga_<0.5>As layer deposited on InAs has on the As-desorption is countered for by capping the layer with 6 to 10 monolayers of InAs.
社団法人応用物理学会の論文
1995-02-01