Oriented Nucleation of Diamond Particles on (001) β-SiC Surface at Low Pressure

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概要

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• Heteroepitaxial nucleation of diamond particles has been achieved on (001) β-SiC surfaces at pressures as low as 0.3 Torr using the bias-enhanced nucleation (BEN) method in an electron cyclotron resonance (ECM) microwave chemical vapor deposition (CVD) system. Oriented nucleation was possible over a length of 40 mm and under various pressures from 0.3 Torr to 2 Torr while increasing the negative bias voltage with the pressure. Moreover, it has been observed that, after pretreatment favorable for oriented nucleation, the substrate exhibited a noticeable stripe surface morphology.

• 社団法人応用物理学会の論文
• 1995-12-15

著者

• Marechal Nadine

  Tokyo Gas Co. Ltd. Frontier Technology Research Institute

• Yamashita Satoshi

  Tokyo Gas Co. Ltd. Frontier Technology Research Institute

関連論文

• Oriented Nucleation of Diamond Particles on (001) β-SiC Surface at Low Pressure

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