Ce^<4+> a New Etching Agent for Cadmium Telluride

概要

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Cadmium telluride (CdTe) has been etched for the first time in a 2M H_2SO_4 solution in the presence of Ce^<4+>. The etching rates have been obtained by means of step measurements. They are proportional to the Ce^<4+> concentration and to the dipping time and are close to etching rates obtained for III-V compounds under the same conditions. The etching rates show no decrease with time in the concentration range studied (10^<-4>-M-10^<-1>M) even for large steps (several μm). Etching rates up to 0.1 μm/min have been obtained, which can be increased by a factor of about 10 by ultrasonication. The evolution of composition of the sample surface has been investigated by means of X-ray photoelectron spectroscopy (XPS) analysis. Elemental tellurium-rich, oxide-free surfaces are obtained after etching in the presence of Ce^<4+>.
社団法人応用物理学会の論文
1995-10-15