Non-Contact, No Wafer Preparation Deep Level Transient Spectroscopy Based on Surface Photovoltage

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概要

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• We discuss a novel approach to Deep Level Transient Spectroscopy (DLTS) in which the emission of trapped minority carriers is analyzed employing the surface photovoltage (SPV) transient as measured in a non-contact manner on the native depletion barrier on semiconductor surfaces. Optical excitation is used as the trap-filling pulse. Experiments done on n-type GaAs demonstrate that the SPV-DLTS is suitable for wafer-scale, non-contact determination of deep level defects on semiconductor surfaces. The SPV approach can monitor emission rates up to 10^6s^<-1> which is 10^2 to 10^3 above the limit of standard capacitance DLTS. The sensitivity of the method is comparable to that of the optical capacitance DLTS.

• 社団法人応用物理学会の論文
• 1992-08-15

著者

• Lagowski J

  Center For Microelectronics Research University Of South Florida

• Edelman Piotr

  Center For Microelectronics Research University Of South Florida

• LAGOWSKI Jacek

  Center for Microelectronics Research, University of South Florida

• MORAWSKI Andrzej

  Center for Microelectronics Research, University of South Florida

• Morawski Andrzej

  Center For Microelectronics Research University Of South Florida

関連論文

• Non-Contact, No Wafer Preparation Deep Level Transient Spectroscopy Based on Surface Photovoltage

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