Origin of External Influences of Domain Stability on Si(100)

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概要

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• In this paper we propose a new mechanism for the induced domain changes on a well orientated Si(100) surface by means of a direct current or applied strain. The process is demonstrated by means of Monte Carlo simulation, where large scale domain changes are observed over long periods of time. The essential element is a small domain dependent perturbation of the surface bonding energy.

• 社団法人応用物理学会の論文
• 1992-03-15

著者

• Kawamura Takaaki

  Imperial College-research Development Corporation Of Japan 'atomic Arrangement: Design And Cont

• WILBY Mark

  Imperial College-Research Development Corporation of Japan, 'Atomic Arranfement

• Wilby Mark

  Imperial College-research Development Corporation Of Japan 'atomic Arranfement: Design And Cont

関連論文

• Origin of External Influences of Domain Stability on Si(100)

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