Polycrystalline GaAs Made by Selective Deposition and Its Optical Properties

概要

論文の詳細を見る
Polycrystalline GaAs was grown by selective deposition using metalorganic chemical vapor deposition. The nucleation of polycrystalline GaAs took place on a small seed of polycrystalline Si on the substrate and overgrowth proceeded to SiO_2 which covered the substrate. The photoluminescence (PL) intensity from polycrystalline GaAs was in inverse proportion to the seed size. When the seed size was 1 μm^2, the PL intensity became six times larger than that for the polycrystalline GaAs on the seed size of 64 μm^2. We fabricated a light-emitting diode (LED) on the amorphous substrate (SiO_2) using polycrystalline GaAs deposited on the l-μm^2-area seed.
社団法人応用物理学会の論文
1992-12-01