Effects of Effective-Mass Hamiltonian Forms on Valence Band Structures of Quantum Wells

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概要

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• Calculations have been made of the valence band structures of two typical quantum well films, GaAs/Al_<0.3>Ga_<0.7>As and In_<0.53>Ga_<0.47>As/InP, using two kinds of effective-mass Hamiltonian forms (characterized by β=0 and β=-1). While the two methods produce no significant difference for GaAs/Al_<0.3>Ga_<0.7>As, a great difference is revealed for In_<0.53>Ga_<0.47>As/InP. The method using β=0 appears to be a better choice for the latter system.

• 社団法人応用物理学会の論文
• 1992-10-01

著者

• Nojima Shunji

  Ntt Opto-electronics Laboratories

関連論文

• Anisotropic Optical Transitions in Semiconductor Quantum Wells
• Effects of Effective-Mass Hamiltonian Forms on Valence Band Structures of Quantum Wells

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