Effect of Residual Gases on Residue Formation during Tungsten/TiN/Ti Etching Using SF_6 and Cl_2 Gas Chemistry
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-07-01
著者
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Chung Cheol
Process Development Section R & D Center Samsung Electronics Co. Ltd.
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Ahn Tae
Process Development Section R & D Center Samsung Electronics Co. Ltd.
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NAM Shin
Process Development Section, R & D Center, SAMSUNG Electronics Co., Ltd.
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MIN Kyung
Process Development Section, R & D Center, SAMSUNG Electronics Co., Ltd.
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Min Kyung
Process Development Section R & D Center Samsung Electronics Co. Ltd.
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Nam Shin
Process Development Section R & D Center Samsung Electronics Co. Ltd.