The Growth of High Quality GaAs on GaAs (111)A

スポンサーリンク

概要

• 論文の詳細を見る

• Whilst it is well known that the growth of GaAs on singular GaAs(111)A substrates frequently gives films with poor morphology, there is little understanding of the mechanisms involved. We have made a systematic study of the growth condition dependence of the surface morphology of such films and these results are discussed in terms of the sticking coefficient of As_4 on the growing GaAs(111)A surface and the origin of the defects is attributed to excess Ga. We have determined the conditions necessary for high quality growth.

• 社団法人応用物理学会の論文
• 1994-07-01

著者

• Joyce Bruce

  The Interdisciplinary Research Centre For Semiconductor Materials The Blackett Laboratory Imperial C

• SATO Kenji

  Japan Energy Corporation

• FAHY Michael

  The Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial

• Fahy Michael

  The Interdisciplinary Research Centre For Semiconductor Materials The Blackett Laboratory Imperial C

関連論文

• The Growth of High Quality GaAs on GaAs (111)A

スポンサーリンク