Modulation Voltage of High T_c DC Superconducting Quantum Interference Device with Damping Resistance
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概要
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The effect of damping resistance on the voltage versus flux (V-φ) relation of the high T_c do superconducting quantum interference device (SQUID) is studied experimentally. Dc SQUID using YBaCuO step-edge junction and damping resistance in parallel with SQUID inductance is fabricated. Measured values of modulation voltage in the V-φ relation are compared with those of the conventional SQUID without damping resistance. It is shown that modulation voltage is much improved by using damping resistance. The obtained experimental results agree reasonably with theoretical predictions reported previously.
- 社団法人応用物理学会の論文
- 1994-05-15
著者
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Doi Hideki
Department Of Electronics Himeji Institute Of Technology
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Doi H
Department Of Electronics Kyushu University
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Enpuku Keiji
Department Of Electrical And Electronic Systems Engineering Faculty Of Information Science And Elect
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TOKITA Go
Department of Electronics, Kyushu University
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MARUO Taku
Department of Electronics, Kyushu University
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Tokita Go
Department Of Electronics Kyushu University
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Maruo Taku
Department Of Electronics Kyushu University
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