Epitaxial Growth of CaF_2/Si/CaF_2 on Si(111)

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概要

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• High quality CaF_2/Si/CaF_2/Si(111) structures have been grown epitaxially by molecular beam epitaxy and characterized by X-ray diffraction analysis, Rutherford backscattering spectroscopy and transmission electron microscopy. High crystalline quality CaF_2 layers are achieved when the thickness of the middle Si layer is small. The films degrade if the thickness of the Si layer exceeds 10 nm. The epitaxial orientations of the two CaF_2 layers can be identical or azimuthally rotated 180 degrees with respect to each other, depending on how the middle Si film is deposited.

• 社団法人応用物理学会の論文
• 1994-04-01

著者

• Park Kyung

  Texas Instruments Incorporated Tsukuba Research And Development Center

• Cho Chih-chen

  Texas Instruments Incorporated Materials Science Laboratory

• Liu H‐y

  Texas Instruments Incorporated Materials Science Laboratory

• LIU Hung-Yu

  Texas Instruments Incorporated, Materials Science Laboratory

• KEENAN Joe

  Texas Instruments Incorporated, Materials Science Laboratory

• Keenan Joe

  Texas Instruments Incorporated Materials Science Laboratory

関連論文

• Epitaxial Growth of CaF_2/Si/CaF_2 on Si(111)

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