Reactive Ion Beam Etching of Indium Phosphide in Electron Cyclotron Resonance Plasma Using Methane/Hydrogen/Nitrogen Mixtures

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概要

• 論文の詳細を見る

• Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures has been performed. This etch chemistry provides a clean process with no polymer deposition. With etching at an ion acceleration voltage of 300 V, mirrorlike etched surfaces are obtained with donor passivation of about 10% . The electrical damage zone is restricted to a depth of 20 nm. Chemical etching limited by sputter-induced desorption of etch products of low volatility is proposed as the etch mechanism.

• 社団法人応用物理学会の論文
• 1994-03-01

著者

• Sendra Jose

  Centro Nacional De Microelectronica Csic

• ANGUITA Jose

  Centro Nacional de Microelectronica, CSIC

• Anguita Jose

  Centro Nacional De Microelectronica Csic

関連論文

• Reactive Ion Beam Etching of Indium Phosphide in Electron Cyclotron Resonance Plasma Using Methane/Hydrogen/Nitrogen Mixtures

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