Reactive Ion Beam Etching of Indium Phosphide in Electron Cyclotron Resonance Plasma Using Methane/Hydrogen/Nitrogen Mixtures
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概要
- 論文の詳細を見る
Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures has been performed. This etch chemistry provides a clean process with no polymer deposition. With etching at an ion acceleration voltage of 300 V, mirrorlike etched surfaces are obtained with donor passivation of about 10% . The electrical damage zone is restricted to a depth of 20 nm. Chemical etching limited by sputter-induced desorption of etch products of low volatility is proposed as the etch mechanism.
- 社団法人応用物理学会の論文
- 1994-03-01
著者
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Sendra Jose
Centro Nacional De Microelectronica Csic
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ANGUITA Jose
Centro Nacional de Microelectronica, CSIC
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Anguita Jose
Centro Nacional De Microelectronica Csic