Effect of Strain Compensation on Crystalline Quality for InGaAs/InAlP Strained Multiple Quantum Well Structures on InP Grown by Gas-Source Molecular Beam Epitaxy

概要

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Crystalline quality is investigated for highly compressive strained multiple quantum well (MQW) structures, with and without strain compensation. Strain compensation is created by tensile strain in the barrier layers of the InGaAs/InAlP system grown by gas-source molecular beam epitaxy on InP substrates. Detailed investigations on the effects of strain compensation on the structutral properties, optical properties and thermal stability for strained MQWs show that strain conpensation produces high-quality strained MQW with very few misfit dislocations and excellent thermal stability. Strained MQWs without strain compensation have many misfit dislocations which are enhanced by thermal annealing.
社団法人応用物理学会の論文
1994-02-01