Paramorphic Growth: A New Approach in Mismatched Heteroepitaxy to Prepare Fully Relaxed Materials

概要

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We propose paramorphic growth as a new approach for growing thick, ideally relaxed, epitaxial layers on mismatched substrates. First, a thin seed layer, originally grown pseudomorphically strained on a mismatched substrate coated with a sacrificial layer, is separated by chemical etching from its original substrate and subsequently deposited on the final substrate after being elastically relaxed. Consequently, thick layers, lattice matched to the cubic-relaxed seed layer, can be grown epitaxially without the introduction of any structural defects. The validity of this approach is demonstrated by growing fully relaxed In_<0.65>Ga_<0.35>As thick layers on 300×300 μm^2 platforms deposited on an InP substrate, using molecular beam epitaxy.
社団法人応用物理学会の論文
1999-09-15