Ultraviolet Photoconductive Hydrogenated Amorphous and Microcrystalline GaN

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概要

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• Hydrogenated amorphous and microcrystalline GaN films are grown by remote-plasma metalorganic chemical vapor deposition at a substrate temperature below 300℃. These films have a stoichiometric composition with 17 to 30 at% hydrogen. The films on aluminum exhibit a fast ultraviolet (UV) photoresponse with a photocurrent to dark current ratio of 10^4. The normalized photoconductivity, ημτ of the film with E_<opt> of 3.2 eV is of the order of 10^<-6> cm^2・V^<-1>. Photodegradation effects have never been observed even after 5 h of irradiation with intense UV light of 500 mW/cm^2.

• 社団法人応用物理学会の論文
• 1999-07-15

著者

• Yagi Shigeru

  Corporate Research Laboratories Fuji Xerox Co. Ltd.

関連論文

• Ultraviolet Photoconductive Hydrogenated Amorphous and Microcrystalline GaN

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