Preservation of Original Single Domain Phase in the Implanted LiTaO_3 Single Crystal by Using Hot Implantation

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概要

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• Because post-annealing of pre-amorphized LiTaO_3 single crystal resulted in a regrown layer of undesired multi-domain phase, hot implantation was studied aiming to preserve the original single domain phase. Ar ion implantation was carried out with samples at temperatures ranging from 100℃ to 377℃. The implanted layer had good crystalline quality. Unlike room temperature implantation, which created a layer of strong optical absorption, hot implantation produced a layer as transparent as a virgin sample. The major advantage of hot implantation is that the implanted layer remains in the original single domain phase without the help of electrical pulling.

• 社団法人応用物理学会の論文
• 1999-07-01

著者

• Chu Wei-kan

  Texas Center For Superconductivity And Department Of Physics University Of Houston

• ZHANG Zuhua

  Texas Center for Superconductivity and Department of Physics, University of Houston

• RUSAKOVA Irene

  Texas Center for Superconductivity and Department of Physics, University of Houston

• Zhang Z

  Texas Center For Superconductivity And Department Of Physics University Of Houston

• Rusakova Irene

  Texas Center For Superconductivity And Department Of Physics University Of Houston

関連論文

• Preservation of Original Single Domain Phase in the Implanted LiTaO_3 Single Crystal by Using Hot Implantation

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