Dielectric Polarization Noise in Low-Noise Si Junction Field-Effect Transistors at 77 K

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概要

• 論文の詳細を見る

• The dielectric polarization noise in low-noise silicon junction field effect transistors (Si JFETs) was measured at 77 K and at low frequencies. The noise generated in the p-n junction was consistent with that of previous measurements. A noise larger than or comparable to the amount of noise in the p-n junction was found at the lead connected to the gate and at the gate electrode. All of the power spectra of the noise current were proportional to the frequency. Reduction of the dielectric polarization noise is important for ultra low-noise current measurement.

• 社団法人応用物理学会の論文
• 1999-05-15

著者

• Akiba Masahiro

  Japan Science And Technology Corporation Regional Joint Research Project Of Yamagata Prefecture

• Akiba M

  Japan Science And Technology Corporation Regional Joint Research Project Of Yamagata Prefecture

• AKIBA Makoto

  Optoelectronics Section Photonics Technology Division, Communications Research Laboratory

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• Dielectric Polarization Noise in Low-Noise Si Junction Field-Effect Transistors at 77 K
• Non-Scanning Optical Coherence Tomography by an Angular Dispersion Imaging Method

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