Initial Oxygen Interaction between Ge(100) and Ge/Si(100) Surfaces Compared by Scanning Tunneling Microscopy

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概要

• 論文の詳細を見る

• The initial stage of oxygen interaction on epitaxially grown Ge overlayers formed on Si(100) (Ge/Si(100)) surfaces and on the Ge(100) surface was compared by scanning tunneling microscopy in an ultrahigh vacuum. Although both surfaces were terminated with Ge dimers, suppression of the reaction by molecular oxygen on the Ge/Si(100) surface was demonstrated at an atomic resolution. In addition, two new types of oxygen-induced reaction products were identified on the Ge/Si(100) surface.

• 社団法人応用物理学会の論文
• 1999-12-01

著者

• FUKUDA Tsuneo

  NTT Basic Research Laboratories

• Fukuda Tsuneo

  Ntt Basic Research Laboratories:(present Address) Ntt Cyberspace Laboratories

関連論文

• Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
• Preservation of the Phase Boundary of Si(111)7×7 Structure in Air Studied by Force Microscopy
• Initial Oxygen Interaction between Ge(100) and Ge/Si(100) Surfaces Compared by Scanning Tunneling Microscopy

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