Fabrication and Luminescence of Narrow Reactive Ion Etched In_<1-x>GaxAs/ImP and GaAs/Ga_<1-x>AlxAs Quantum Wires : Micro/nanofabrication and Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-30
著者
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Benchimol J.l.
Ntt Basic Research Laboratories:france Telecom Cnet Bagneux Laboratories
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Taylor L.
L2m
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IZRAEL A.
Laboratories de Bangneux, Centre National d'Etudes des Telecommunications
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MARZIN J.Y.
Laboratories de Bangneux, Centre National d'Etudes des Telecommunications
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SERMAGE B.
Laboratories de Bangneux, Centre National d'Etudes des Telecommunications
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BIROTHEAU L.
Laboratories de Bangneux, Centre National d'Etudes des Telecommunications
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ROBEIN D.
Laboratories de Bangneux, Centre National d'Etudes des Telecommunications
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AZOULAY R.
Laboratories de Bangneux, Centre National d'Etudes des Telecommunications
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BENCHIMOL J.L.
Laboratories de Bangneux, Centre National d'Etudes des Telecommunications
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HENRY L.
Laboratories de Bangneux, Centre National d'Etudes des Telecommunications
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THIERRY-MIEG V.
L2M
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LANDAN F.R.
CNRS
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LADAN F.R.
CNRS
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Robein D.
Laboratories De Bangneux Centre National D'etudes Des Telecommunications
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Izrael A.
Laboratories De Bangneux Centre National D'etudes Des Telecommunications
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Azoulay R.
Laboratories De Bangneux Centre National D'etudes Des Telecommunications
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Sermage B
France Telecom Bagneux Fra
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Marzin J.y.
Laboratories De Bangneux Centre National D'etudes Des Telecommunications
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Birotheau L.
Laboratories De Bangneux Centre National D'etudes Des Telecommunications
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Henry L.
Laboratories De Bangneux Centre National D'etudes Des Telecommunications
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SERMAGE B.
Laboratories de Bangneux, Centre National d'Etudes des Telecommunications
関連論文
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Fabrication and Luminescence of Narrow Reactive Ion Etched In_GaxAs/ImP and GaAs/Ga_AlxAs Quantum Wires : Micro/nanofabrication and Devices
- Fabrication and Luminescence of Narrow Reactive Ion Etched In_Ga_xAs/InP and GaAs/Ga_Al_xAs Quantum Wires