On Refractory Boron Compounds Crystallizing in B_4C-type Structures
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-06-30
著者
-
Lundstrom Torsten
Institute Of Chemistry Uppsala University
-
Lundstrom Torsten
Institute Of Chemistry University Of Uppsala
-
BOLMGREN Hedvig
Institute of Chemistry, Uppsala University
-
Bolmgren Hedvig
Institute Of Chemistry Uppsala University
関連論文
- Crystal Growth and Some Properties of LuB_4, LuAlB_4, and Lu_2AlB_6
- Preparation of CrB by Reaction between Chromium and Amorphous Boron with Addition of Halides (II)
- Crystal Growth of YbB_4, YbB_6 and YbAlB_4 Single Crystals Using the Aluminum-Flex Method and Properties of the Crystals
- Growth Conditions and Some Properties of TmB_4 and TmAlB_4 Single Crystals Obtained from High-Temperature Aluminium Metal Solution
- Some Properties of Orthorhombic Borides of MgAlB_-Type
- C-Doped β-Rhombohedral Boron, Structure and Optical Properties
- Some Properties of Amorphous Boron
- On the Structural Effect of the Insertion of Carbon Atoms in B_ Icosahedra
- On Refractory Boron Compounds Crystallizing in B_4C-type Structures
- Aluminum-Flux Growth and Properties Measurements of VB, V_5B_6, V_3B_4, V_2B_3 and VB_2 Single Crystals
- The α-AlB_ Structure and an Isotope Effect in It, as Observed by Means of X-ray Diffraction
- Preparations and Some Properties of W_2B, δ-WB and WB_2 Crystals from High-Temperature Metal Solutions