Detection of EL2 in Undoped LEC GaAs by a Novel Variation of Photo-Induced Transient Spectroscopy

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概要

• 論文の詳細を見る

• A variation of Photo-Induced Transient Spectroscopy (PITS) is described. By elimination of charge exchange with the surface of semi-insulating GaAs, negative peaks in PITS spectra are suppressed. This allows the transient response of bulk EL2 centres to be detected by PITS in undoped LEC GaAs for the first time.

• 社団法人応用物理学会の論文
• 1987-08-20

著者

• Page A.

  Gec Research Limited Hirst Research Centre

• BLIGHT S.

  GEC Research Limited, Hirst Research Centre

• LADBROOKE P.

  GEC Research Limited, Hirst Research Centre

• THOMAS H.

  Department of Physics, Electronics and Electrical Engineering

• Blight S.

  Gec Research Limited Hirst Research Centre

• Ladbrooke P.

  Gec Research Limited Hirst Research Centre

関連論文

• Detection of EL2 in Undoped LEC GaAs by a Novel Variation of Photo-Induced Transient Spectroscopy

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