In Situ Electrical and Optical Measurements on GaAs Epitaxial Layers during Chemical Etching

概要

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For the detailed characterization of epitaxial GaAs a chemical method has been devised. This method combines carrier concentration vs depth profile measurements with in-depth photocapacitance spectroscopy regarding the deep levels involved in a sample. This method was constructed on the following base: (1) Uniform chemical-etching by suitable etchants selected in the H_2SO_4-H_2O_2-H_2O system and (2) In situ capacitance and photocapacitance measurements on the etchant as well as the other electrolyte Schottky contact. In applying the method there is almost no restriction on the magnitude of both the carrier concentration and the sample-thickness. It can, therefore, be applied to various samples, including their interface regions. Here, details of the method and typical results are presented.
社団法人応用物理学会の論文
1987-08-20