Experimental Characterization of Electrical Conduction in Undoped Polycrystalline Silicon Thin Films

スポンサーリンク

概要

• 論文の詳細を見る

• Electrical conduction in undoped LPCVD polycrystalline silicon was examinated at both low and high fields. The physical mechanisms pertinent to the current-voltage (I-V) characteristics were experimentally interrogated. Specially, the localized self heating near grain boundaries that is responsible for nonlinear I-V behavior was further corroborated by the temperature dependence of the resistivity and the high-feld I-V behavior. These data were quantified, based on local Joule heating and a concomitant rise in the sample temperature.

• 社団法人応用物理学会の論文
• 1987-06-20

著者

• Qian Feng

  Oregon Graduate Center

• Park H.k.

  Applied Research Laboratory Tektronix Inc.

• KIM Dae

  Oregon Graduate Center

• AHMED S.S.

  Technology and Development Laboratory, Intel Corporation Inc.

• SACHITANO J.L.

  Applied Research Laboratory, Tektronix Inc.

• Ahmed S.s.

  Technology And Development Laboratory Intel Corporation Inc.

• Sachitano J.l.

  Applied Research Laboratory Tektronix Inc.

関連論文

• Experimental Characterization of Electrical Conduction in Undoped Polycrystalline Silicon Thin Films

スポンサーリンク