A Parametric Study of the Etching of Silicon in SF_6 Microwave Multipolar Plasmas : Interpretation of Etching Mechanisms

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概要

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• A parametric study of the etching of silicon has been performed in a Microwave Multipolar Plasma using an Electron Cyclotron Resonance excitation. The evolution of the anisotropy and etch rate is measured as a function of the SF_6 pressure, ion energy (< 100 eV) and ion current density collected on the silicon wafers. For a given ion current density and ion energy, perfect anisotropy is obtained below a critical SF_6 pressure whereas the etch rate, independent of ion energy and current density, increases proportionally with the SF_6 pressure in the domain investigated. These results, corroborated by the mass spectrometry analysis of the reaction products are explained through the diffusion model recently proposed for plasma etching.

• 社団法人応用物理学会の論文
• 1987-06-20

著者

• Pelletier J.

  Physique Des Milieux Ionises

• PETIT B.

  Physique des Milieux Ionises

• Petit B.

  Physique Des Milieux Ionises:(present Address) E.t.a. Electrotech

関連論文

• A Parametric Study of the Etching of Silicon in SF_6 Microwave Multipolar Plasmas : Interpretation of Etching Mechanisms

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