Zinc-Diffusion in GaAs Using a Sintered Ternary Source

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概要

• 論文の詳細を見る

• A ternary Zn_3As_2-ZnAs_2-GaAs source for the diffusion of Zn in GaAs has been developed by a low temperature sintering technique that does not require special safety precautions. Wafers diffused using this source remained free of damage. Doping concentrations and diffusion depths agree with the results of the best high temperature Ga/As/Zn diffusion sources.

• 社団法人応用物理学会の論文
• 1987-04-20

著者

• WERNER J.

  Swiss Federal Institute of Technology, Institute of Quantum Electronics

• MELCHIOR H.

  Swiss Federal Institute of Technology, Institute of Quantum Electronics

関連論文

• Zinc-Diffusion in GaAs Using a Sintered Ternary Source

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