Transport of Charge Carriers in Methylbixin Crystals: Photoconductivity Decay Measurements
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概要
- 論文の詳細を見る
The energy distribution of gap states in methylbixin crystallites has been investigated by photoconductivity decay measurements. The results show that the shallow states decrease exponentially with characteristic temperature T_c〜900 K at an applied field of 1.77×10^3 V/cm. T_c is independent of sample temperature but depends inversely on applied field. It is suggested that field effect on T_c may arise from the field effect on trapping rate.
- 社団法人応用物理学会の論文
- 1987-02-20
著者
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Pal Prabir
Optics Department Indian Association For The Cultivation Of Science
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Ghosh Dilip
Optics Department Indian Association For The Cultivation Of Science
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MISRA T.
Optics Department, Indian Association for the Cultivation of Science
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Misra T.
Optics Department Indian Asociation For The Cultivation Of Science
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JAIN K.
Optics Department, Indian Association for the Cultivation of Science
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Jain K.
Optics Department Indian Association For The Cultivation Of Science
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- Transport of Charge Carriers in Methylbixin Crystals: Photoconductivity Decay Measurements
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