Nature of Oxygen Donor in Czochralski-Grown Silicon

概要

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Changes in the substitutional carbon and interstitial oxygen concentrations due to the formation of oxygen donors were studied on carbon-rich Czochralski-grown silicon (7-9×10^<17> carbon atoms/cm^3). The result suggests that the new donor formation is controlled not by the substitutional carbon concentration directly, but by a density of some unknown embryo. A donor formation was observed in a 450℃ annealing which was preceded by a 650℃ annealing without new donor formation. This donor does not exhibit a 0.767 eV line in a measurement of the photoluminescence spectrum. However,it exhibits an infrared absorption band which is characteristic to the thermal donor.
社団法人応用物理学会の論文
1987-02-20