Spatially Resolved Ellipsometry for Semiconductor Process Control: Application to GaInAs MIS Structures

概要

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A new assessment technique, a spectroscopic ellipsometry system with high lateral resolution (10×10 μm spot), is introduced. Its high surface sensitivity is used at each step of a typical technological process, the fabrication of GaInAs metal-insulator-semiconductor structures, namely oxide removal, etching, and dielectric deposition. The measured non-uniformity of the Si_3N_4/GaInAs interface quality over the wafer is directly correlated to the electrical characteristics of the devices. This is a direct proof of the influence of the native oxide at this interface upon the electrical drift of MIS structures.
社団法人応用物理学会の論文
1987-11-20