Volume Change due to Intermetallic Compound Formation at the Al-Au Bond in Semiconductor Devices

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概要

• 論文の詳細を見る

• The molar volume of an Al-Au intermetallic compound was calculated and compared with those of Al and Au individually. It is well known That, though the molar volume of an AlAu_4 compound is smaller than the sum of those of Al and Au, it is larger than that of Al. It is shown that this fact can be explained by taking into consideration the differences between the densities of Al, Au and Al-Au alloys and the component ratio of the compound. Practically, it is pointed out that this volume effect can induce pores at an imperfect bond between Al films and Au wires in Si devices. This suggests that such partial openings should be distinguished from Kirkendall voids.

• 社団法人応用物理学会の論文
• 1986-06-20

著者

• Katoh Hiroshi

  Hitachi Microcomputer Engineering Lid.

関連論文

• Volume Change due to Intermetallic Compound Formation at the Al-Au Bond in Semiconductor Devices

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