Analysis of Capacitive Coupling Voltage Contrast in Scanning Electron Microscopy

スポンサーリンク

概要

• 論文の詳細を見る

• The capacitive coupling voltage contrast occurring when a low-energy electron beam is directed on to a passivated LSI device in scanning electron microscopy disappears with increasing electron irradiation, and the secondary electron (SE) signal intensity varies proportionally with the surface potential. The experimental contrast variation of the capacitive coupling voltage in the buried electrode is analyzed theoretically. The calculated results on the SE signal intensity agree well with the experimental ones.

• 社団法人応用物理学会の論文
• 1985-10-20

著者

• Fukuda Yukio

  Ntt Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation

• WATANABE Yoshio

  NTT Musashino Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation

• JINNO Takamitsu

  NTT Musashino Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation

• Jinno Takamitsu

  Ntt Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation

• Watanabe Yoshio

  Ntt Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation

関連論文

• Analysis of Capacitive Coupling Voltage Contrast in Scanning Electron Microscopy

スポンサーリンク