Electrical Conductivity Regulated by Transverse Electric Field in the Hot Electron Range in n-Type Silicon

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概要

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• An attempt was made to control the electrical conductivity of n-type silicon by utilizing the anisotropic character of hot electrons. The I_<<100>>-V_<<100>> characteristics were measured in the presence of <010> electric fields at 77 K. The roles of the intervalley redistribution and the intravalley scattering of hot electrons in the observed results are discussed on the basis of an expression for the mobility in the <100> direction.

• 社団法人応用物理学会の論文
• 1984-05-20

著者

• Toyotomi Seizo

  Physics Department Toyama Medical And Pharmaceutical University

• Toyotomi Seizo

  Physics Department Faculty Of Medicine Toyama Medical And Pharmaceutical University

関連論文

• Control of Electrical Conductivity by Hot-Electron Intervalley Transfer in n-Type Silicon
• Electrical Conductivity Regulated by Transverse Electric Field in the Hot Electron Range in n-Type Silicon

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