Resist Pattern Reformation by Reactive Ion Etching with Ar+CH_4 Gas Mixture and Its Application

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概要

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• Resist sputter-etching characteristics and deposited film morphology on a fine pattern are investigated in this paper. An Ar + CH_4 gas mixture is adopted as the etching gas to combine the sputter-etching with the hydrocarbon film deposition for the reformation of resist pattern. The resist pattern is reformed in this way with no reduction in the resist pattern width. This method forms a high resistance layer on the resist surface, improving dry etching durability of the resist. This method is then applied to a two-layer resist pattern formation process and it is found that submicron pattern can be easily obtained in two-layer (FBM/PMMA) resist.

• 社団法人応用物理学会の論文
• 1984-04-20

著者

• Watanabe Iwao

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Resist Pattern Reformation by Reactive Ion Etching with Ar+CH_4 Gas Mixture and Its Application

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