Trap Depth at the Interface of CdTe-ZnTe Heterojunctions

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概要

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• A study of the spectroscopy of deep levels has been made through measurements of complex admittance and also by the thermally-stimulated capacitance (TSCAP) method at the interface of CdTe -ZnTe heterojunctions in which epitaxial layers of ZnTe were grown on the Cd and Te planes of n-CdTe single crystals. The complex admittance measurements show that right from the shallow levels of about 0.12 eV, as many as four trapped levels exist, with the deepest level being around 1 eV. Also, the TSCAP measurements show the existence of two levels at 0.28 eV and 0.6 eV. These values agree well with the admittance spectroscopy results. The mechanisms and causes of the experimental results are discussed in this paper.

• 社団法人応用物理学会の論文
• 1984-02-20

著者

• Koyama Yasuhiro

  Electrical Engineering Department Nagoya Institute Of Technology:(present Address)toshiba Corporatio

• Khan Mohammad

  Electrical Engineering Department Nagoya Institute Of Technology

• Saji Manabu

  Electrical Engineering Department, Nagoya Institute of Technology

• Saji Manabu

  Electrical Engineering Department Nagoya Institute Of Technology

関連論文

• Trap Depth at the Interface of CdTe-ZnTe Heterojunctions

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