Preparation of Low-Reflectivity Amorphous Silicon Using DC Magnetron Sputtering

概要

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The optical properties of dc magnetron-sputtered amorphous Si (a-Si) films grown under different Ar pressures (1.5≤P_<Ar>≤12 mTorr) and substrate-target distances (5≤l_<s-t>≤30 cm) were investigated. The reflectivity was found to decrease with increasing P_<Ar> and l_<s-t>, or equivalently with decreasing film density, and was 0.22 at λ=436 nm for the film with the lowest density. The absorption coefficient for this lowest reflectivity film was larger than 1×10^5cm^<-1> at λ=436nm. These optical properties meet the requirements for anti-reflective coatings in photolithography. Low-reflectivity a-Si could be obtained under deposition conditions for which P_<Ar>・l_<s-t> was larger than 150 mTorr・cm. The low density and low reflectivity were found to be due to a self-shadowing effect and thermalization of sputtered Si atoms.
社団法人応用物理学会の論文
1984-10-20