Feasibility of the LPE Growth of Al_xGa_yIn_<1-x-y>P on GaAs Substrates

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概要

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• The maximum direct bandgap energy of Al_xGa_yIn_<1-x-y>P lattice-matched to GaAs is found to be 2.17 eV at x=0.21 and y=0.34. This is the largest value among the III-V compounds with the zinc- blende structure. The phase diagram is calculated of the quaternary system Al-Ga-In-P. It is predicted that the LPE growth of Al_xGa_yIn_<1-x-y>P will encounter serious difficulties resulting from the extremely large segregation coefficient of aluminum. In fact, experiments have shown that aluminum is not incorporated into the crystals grown from the quaternary solutions because of the instant depletion of aluminum at the very early stage of the cooling process.

• 社団法人応用物理学会の論文
• 1983-04-20

著者

• Teramoto Iwao

  Semiconductor Laboratory Matsushita Electronics Corporation

• Kazumura Masaru

  Semiconductor Laboratory Matsushita Electronics Corporation

• OHTA Issey

  Semiconductor Laboratory, Matsushita Electronics Corporation

• Ohta Issey

  Semiconductor Laboratory Matsushita Electronics Corporation

関連論文

• Visible-Light-Emitting TS Lasers
• Feasibility of the LPE Growth of Al_xGa_yIn_P on GaAs Substrates

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