Effect of Electric Field and Polarity on Light Emission in Metal-Insulator-Semiconductor Structure Thin-Film Electroluminescent Devices

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概要

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• Changes in the emission intensities and spectra with applied electric fields in Metal-Insulator-Semiconductor (MIS) structure thin-film electroluminescent (TFEL) devices have been investigated using devices with stacked emitting layer structures, such as ITO/ZnS: Mn/ZnS: Tb/Sm_2O_3/Al. In MIS-TFEL devices, the emission distribution in the direction of the ZnS film thickness is nonhomogeneous. In particular, the emission intensity in the region near the ZnS-insulator interface increases with increasing applied voltage more than in the other region in the ZnS layer, when electrons exciting emission centers are accelerated from the insulator side. On the other hand, the emission is homogeneous at the opposite polarity. It is found that the emission color for stacked emitting layer MIS-TFEL devices can be modulated by changing the applied voltage.

• 社団法人応用物理学会の論文
• 1983-01-20

著者

• KOZAWAGUCHI Haruki

  Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• TSUJIYAMA Bunjiro

  Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Tsujiyama Bunjiro

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Kozawaguchi Haruki

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• OHWAKI Jun-ichi

  Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Ohwaki Jun-ichi

  Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Green Electroluminescence in Low-Voltage-Driven Metal-Insulator-Semiconductor Structure Devices
• Effect of Electric Field and Polarity on Light Emission in Metal-Insulator-Semiconductor Structure Thin-Film Electroluminescent Devices

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