Thin-Film Electroluminescent Device Employing Ta_2O_5 RF Sputtered Insulating Film

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概要

• 論文の詳細を見る

• In order to fabricate low-voltage-driven high-brightness thin-film electroluminescent devices, the emission characteristics of devices employing low dielectric loss Ta_2O_5 RF-sputtered insulating films have been studied in comparison with those of devices employing Y_2O_3, Sm_2O_3 and Al_2O_3 deposited insulators. It was found that the devices employing Ta_2O_5, RF-sputtered films exhibited higher brightness, lower driving voltage and higher stability than the other devices. In addition, no aging was observed in the Ta_2O_5 insulated devices. These results indicate that the Ta_2O_5 RF-sputtered film is suitable as the insulating film in thin-film electroluminescent devices, and that the properties of the insulating film are closely related to the emission characteristics in such devices.

• 社団法人応用物理学会の論文
• 1982-07-20

著者

• Tsujiyama Bunjiro

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Kozawaguchi Haruki

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Tsujiyama Bunjiro

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• MURASE Kei

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Kozawaguchi Haruki

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Murase Kei

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Red Electroluminescence and Crystallinity of ZnS:SmF_3 Thin Films
• Thin-Film Electroluminescent Device Employing Ta_2O_5 RF Sputtered Insulating Film
• Liquid Crystalline Properties of Substituted Azo- and Azoxy-benzenes. I

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