Amorphous Built-in-Field Effect Photoreceptors

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概要

• 論文の詳細を見る

• Thin-film photodiodes with the graded-composition structures of amorphous Se-As-Te have been developed. The physical mechanism of the buit-in-field effect in these highly resistive photodiodes has been clarified. In order to realize complicated composition distributions, multi-layer evaporation technology has also been developed. The physical properties of multi-layered films and those of the uniform amorphous film have been compared, and it has been shown that a multi-layered film of 1 nm periodicity can be regarded as an almost uniform amorphous material. Built-in-field effect photoreceptors can be utilized not only for TV pickup tubes but also for highly sensitive xerographic plate and other solid-state sensors.

• 社団法人応用物理学会の論文
• 1982-02-05

著者

• MARUYAMA Eiichi

  Central Research Laboratory, Hitachi Ltd.

• Maruyama Eiichi

  Central Research Laboratory Hitachi Ltd.

• Maruyama Eiichi

  Central Research Laboratory

• MARUYAMA Eiichi

  Central Research Laboratory, Hitachi, Ltd.

関連論文

• Amorphous Silicon Image Pickup Devices : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Amorphous Built-in-Field Effect Photoreceptors
• A 10 ×10 Polycrystalline-Silicon Thin-Film Transistor Matrix for Liquid-Crystal Display : C-4: THIN FILM DEVICES

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